Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask
(2005)
Journal Article
Pang, L., Nezhad, M., Levy, U., Tsai, C.-H., & Fainman, Y. (2005). Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask. Applied Optics, 44(12), 2377-2381. https://doi.org/10.1364/AO.44.002377
A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved to... Read More about Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask.