Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma
(2019)
Journal Article
Panduranga, P., Abdou, A., Ren, Z., H. Pedersen, R., & P. Nezhad, M. (2019). Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma. Journal of Vacuum Science and Technology B, 37(6), https://doi.org/10.1116/1.5116021
The characteristics of isotropic etching of silicon in a purely inductively coupled SF plasma are quantitatively studied. Since the etch results are strongly dependent on mask features, the authors investigated both large area and narrow trench etch... Read More about Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma.