All Outputs (4)

A transmission electron microscopy study of the effects of helium irradiation on polycrystalline and monocrystalline silicon (2011)
Thesis
Abrams, K. A transmission electron microscopy study of the effects of helium irradiation on polycrystalline and monocrystalline silicon. (Thesis). University of Salford

This work is a fundamental study of the effects of helium (He) implantation into polycrystalline silicon (poly-Si). Following implantation, He interaction and vacancy agglomeration lead to the nucleation of bubbles. Recent scientific literature cont... Read More about A transmission electron microscopy study of the effects of helium irradiation on polycrystalline and monocrystalline silicon.

The application of MEIS for the physical characterisation of high-k ultra thin dielectric layers in microelectronic devices (2010)
Thesis
Reading, M. The application of MEIS for the physical characterisation of high-k ultra thin dielectric layers in microelectronic devices. (Thesis). Salford : University of Salford

During the last decade the use of 8162 as gate dielectric layers in complementary metal oxide semiconductor (CMOS) microelectronic devices has become increasingly problematic due to leakage resulting from the electron tunnelling... Read More about The application of MEIS for the physical characterisation of high-k ultra thin dielectric layers in microelectronic devices.

Investigation of space charge neutralization effects in high-current positive ion beams (2008)
Thesis
Fiala, J. Investigation of space charge neutralization effects in high-current positive ion beams. (Thesis)

Through the experience gained during the industrial development of low energy implanters, it is commonly believed that improvements in forced space-charge neutralization are responsible for the maintenance of high currents down to an energy of abo... Read More about Investigation of space charge neutralization effects in high-current positive ion beams.

Damage formation and annealing studies of low energy ion implants in silicon using medium energy ion scattering (2006)
Thesis
Werner, M. Damage formation and annealing studies of low energy ion implants in silicon using medium energy ion scattering. (Thesis). University of Salford, UK

The work described in this thesis concerns studies of damage and annealing processes in ion implanted Si, relevant for the formation of source / drain extensions in sub 100 nm CMOS devices. Implants were carried out using 1-3 keV As, BF2 and Sb io... Read More about Damage formation and annealing studies of low energy ion implants in silicon using medium energy ion scattering.