Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films
(2003)
Thesis
Sirotkina, N. Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films. (Thesis). University of Salford
Ta205 and Si02 thin films, deposited at room temperature by ion-beam sputtering (IBS) and dual ion-beam sputtering (DIBS), and Si02 films, deposited by reactive e-beam evaporation and ion-assisted deposition, were studied. The energy (150-600 eV) and... Read More about Stress in ion-beam assisted silicon dioxide and tantalum pentoxide thin films.