Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship
(2004)
Journal Article
Damage distributions resulting from 0.1-2 keV B+ implantation at room temperature into Si(100) to doses ranging from 1×1014 to 2×1016 cm-2 have been determined using high-depth-resolution medium-energy-ion scattering in the double alignment mode. For... Read More about Damage profiles of ultrashallow B implants in Si and the Kinchin-Pease relationship.