Radiation damage in copper indium diselenide

Hinks, JA

Abstract

A study of radiation damage in copper indium diselenide (CIS) is presented. The
build up of extended defects and the conditions for amorphisation have been
explored. In particular, dislocation loops have been characterised and the
influence of composition and temperature on amorphisation has been investigated.
In situ and ex situ transmission electron microscopy (TEM) have been used to
examine the effects on CIS of irradiation with 400 keV xenon ions at both ambient
and cryogenic temperatures. Significant portions of the reciprocal lattice of CIS
have been recorded using electron diffraction and these are presented alongside
computational results. The zone-axis pattern maps produced in this way have
been employed in the TEM analysis of dislocation loops which were found to form
as a result of irradiation at room temperature.
To facilitate this work, CIS bulk-material containing macroscopic single-crystals
has been produced using the Bridgman growth technique. Both grown and
supplied CIS have been characterised using methods including: electron dispersive
x-ray spectroscopy to determine composition; x-ray powder diffraction to verify
crystallinity; and hot-probe carrier analysis to identify conductivity type.
CIS is a candidate for high-efficiency radiation-hard solar cells for use in
extraterrestrial environments. Whilst the ability of CIS-based photovoltaic devices
to withstand radiation has been clearly demonstrated in the laboratory and on
orbit, the underlying mechanisms by which it achieves this resistance are unclear.
This thesis attempts to explain these properties of CIS and to give insight into the
means by which they arise.

Citation

Hinks, J. Radiation damage in copper indium diselenide. (Thesis). University of Salford

• Thesis Type: Thesis
• Deposit Date: Aug 18, 2021
• Award Date: Apr 1, 2007