Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell

Sogabe, T; Kaizu, T; Okada, Y; Tomic, S

Abstract

A GaAs quantum dot (QD) array embedded in a AlGaAs host material was
fabricated using a strain-free approach, through combination of neutral beam etching
and atomic hydrogen-assisted molecular beam epitaxy regrowth. In this work, we
performed theoretical simulations on a GaAs/AlGaAs quantum well, GaAs QD and
QD array based intermediated band solar cell (IBSC) using a combined multiband
k·p and drift-diffusion transportation method. The electronic structure, IB band
dispersion, and optical transitions, including absorption and spontaneous emission
among the valence band, intermediate band, and conduction band, were calculated.
Based on these results, maximum conversion efficiency of GaAs/AlGaAs QD
array based IBSC devices were calculated by a drift-diffusion model adapted to
IBSC under the radiative recombination limit.

Citation

Sogabe, T., Kaizu, T., Okada, Y., & Tomic, S. (2014). Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell. Journal of Renewable and Sustainable Energy, 6(1), 011206. https://doi.org/10.1063/1.4828359

• Journal Article Type: Article
• Acceptance Date: Aug 1, 2013
• Online Publication Date: Nov 12, 2013
• Publication Date: Jan 1, 2014
• Deposit Date: Dec 8, 2015
• Publicly Available Date: Apr 5, 2016
• Journal: Journal of Renewable and Sustainable Energy
• Electronic ISSN: 1941-7012
• Publisher: AIP Publishing
• Volume: 6
• Issue: 1
• Pages: 011206
• DOI: https://doi.org/10.1063/1.4828359
• Publisher URL: http://dx.doi.org/10.1063/1.4828359
• Related Public URLs: http://scitation.aip.org/content/aip/journal/jrse
• Additional Information: Funders : New Energy and Industrial Technology Development Organisation (NEDO), Japan;Royal Society, London