High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films

Odedra, R; Boag, NM; Anthis, J; Kanjolia, R

Abstract

A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R.sup.1 and R.sup.2 are independently C.sub.2-C.sub.8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.

• Acceptance Date: Jul 12, 2012
• Deposit Date: Jun 17, 2015
• Publicly Available Date: Jun 17, 2015
• Additional Information: Corporate Creators : Sigma-Aldrich Co. LLC (St. Louis, MO); Patent Applicant : Odedra, R, Boag, N, Anthis, J, Kanjolia, R; Funders : Sigma Aldrich HiTech