R Odedra
High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
Odedra, R; Boag, NM; Anthis, J; Kanjolia, R
Authors
NM Boag
J Anthis
R Kanjolia
Abstract
A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R.sup.1 and R.sup.2 are independently C.sub.2-C.sub.8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
Citation
Odedra, R., Boag, N., Anthis, J., & Kanjolia, R. (in press). High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
Acceptance Date | Jul 12, 2012 |
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Deposit Date | Jun 17, 2015 |
Publicly Available Date | Jun 17, 2015 |
Additional Information | Corporate Creators : Sigma-Aldrich Co. LLC (St. Louis, MO) Patent Applicant : Odedra, R, Boag, N, Anthis, J, Kanjolia, R Funders : Sigma Aldrich HiTech |
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