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High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films

Odedra, R; Boag, NM; Anthis, J; Kanjolia, R

Authors

R Odedra

NM Boag

J Anthis

R Kanjolia



Abstract

A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R.sup.1 and R.sup.2 are independently C.sub.2-C.sub.8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.

Citation

Odedra, R., Boag, N., Anthis, J., & Kanjolia, R. (in press). High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films

Acceptance Date Jul 12, 2012
Deposit Date Jun 17, 2015
Publicly Available Date Jun 17, 2015
Additional Information Corporate Creators : Sigma-Aldrich Co. LLC (St. Louis, MO)
Patent Applicant : Odedra, R, Boag, N, Anthis, J, Kanjolia, R
Funders : Sigma Aldrich HiTech

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