Methods of forming thin metal-containing films by chemical phase deposition

Kanjolia, R; Odedra, R; Boag, NM; Weyburne, D

Abstract

Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic layer deposition (ALD) and chemical vapor deposition (CVD), are provided. The methods comprise delivering at least one organometallic precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula (II); wherein: M is Ru, Fe or Os; R is Q-C.sub.10-alkyl; X is C.sub.1-C.sub.10-alkyl; and n is zero, 1, 2, 3, 4 or 5. Further provided are methods of making precursors disclosed herein.

Citation

Kanjolia, R., Odedra, R., Boag, N., & Weyburne, D. (in press). Methods of forming thin metal-containing films by chemical phase deposition

• Acceptance Date: Jul 24, 2007
• Deposit Date: Jul 31, 2015
• Additional Information: Corporate Creators : Sigam Aldrich Co., LLC (St Loius, MO); Patent Applicant : Konjolia, Ravi; Odedra, Rajesh; Boag, Neil; Weyburne, David; Funders : Sigma Aldrich HiTech