Organometallic precursors for use in chemical phase deposition processes

Kanjolia, R; Odedra, R; Boag, NM

Abstract

An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R).sub.nM(CO).sub.2(X) (Formula I) wherein: M is Ru, Fe or Os; R is C.sub.1-C.sub.10-alkyl; X is C.sub.1-C.sub.10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD.

Citation

Kanjolia, R., Odedra, R., & Boag, N. (in press). Organometallic precursors for use in chemical phase deposition processes

• Acceptance Date: Jul 24, 2007
• Deposit Date: Jul 31, 2015
• Additional Information: Corporate Creators : Sigma-Aldrich Co. LLC (St. Louis, MO); Patent Applicant : Kanjolia, Ravi; Odedra, Rajesh; Boag, Neil; Funders : Sigma Aldrich HiTech