R Kanjolia
Organometallic precursors for use in chemical phase deposition processes
Kanjolia, R; Odedra, R; Boag, NM
Authors
R Odedra
NM Boag
Abstract
An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R).sub.nM(CO).sub.2(X) (Formula I) wherein: M is Ru, Fe or Os; R is C.sub.1-C.sub.10-alkyl; X is C.sub.1-C.sub.10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD.
| Acceptance Date | Jul 24, 2007 |
|---|---|
| Deposit Date | Jul 31, 2015 |
| Additional Information | Corporate Creators : Sigma-Aldrich Co. LLC (St. Louis, MO) Patent Applicant : Kanjolia, Ravi; Odedra, Rajesh; Boag, Neil Funders : Sigma Aldrich HiTech |