Influence of confinement energy and band anticrossing effect on the electron effective mass in Ga1−yInyNxAs1−x quantum wells

Tomic, S; O’Reilly, E

Abstract

We present a theoretical study of the electron effective mass in Ga1−yInyNxAs1−x∕GaAs quantum well (QW) structures. The calculations are based on a 10×10 k∙p band anticrossing Hamiltonian, incorporating valence, conduction, and nitrogen-induced bands. The results are tested by comparison with the experimentally determined electron effective mass in QWs with indium composition in the range between 10% and 50%, and nitrogen concentration between 1% and 5%. We report good agreement with experiment, confirming that the enhanced electron effective mass observed in the Ga1−yInyNxAs1−x QW structures considered can be fully accounted for using the band anticrossing model.

Citation

Tomic, S., & O’Reilly, E. (2005). Influence of confinement energy and band anticrossing effect on the electron effective mass in Ga1−yInyNxAs1−x quantum wells. Physical review B: Condensed matter and materials physics, 71(23), 233301. https://doi.org/10.1103/PhysRevB.71.233301

• Journal Article Type: Article
• Publication Date: Jan 1, 2005
• Deposit Date: Nov 7, 2011
• Journal: Physical Review B (PRB)
• Print ISSN: 1098-0121
• Publisher: American Physical Society
• Peer Reviewed: Peer Reviewed
• Volume: 71
• Issue: 23
• Pages: 233301
• DOI: https://doi.org/10.1103/PhysRevB.71.233301
• Publisher URL: http://dx.doi.org/10.1103/PhysRevB.71.233301