Structure, morphology, and optical properties of GaxIn1−xN0.05As0.95 quantum wells:Influence of the growth mechanism

McGee, W; Williams, R; Ashwin, M; Jones, T; Clarke, E; Zhang, J; Tomic, S

Abstract

Scanning tunneling microscopy, x-ray diffraction, and photoluminescence spectroscopy have been used to investigate the effects of In concentration and growth temperature on the morphology, structure, and optical properties of GaInNAs quantum wells (QWs) containing 5% N grown by plasma-assisted molecular beam epitaxy. At higher growth temperatures (450 °C) spinodal decomposition and three-dimensional growth readily occurs for high In-content QWs. Lateral segregation of N is enhanced by using higher In concentrations with surface diffusion leading to segregation along an oscillatory strain field that is formed on a planar yet laterally segregated film. Once formed, the N-rich regions alter the band structure and act as quantum-dot-like emitters, with redshifted optical emission. Growth at lower temperatures (400 °C) reduces the extent of spinodal decomposition. The QWs were found to be highly uniform, and the measured emission wavelengths agree very well with values calculated using band anticrossing k∙p models.

Citation

McGee, W., Williams, R., Ashwin, M., Jones, T., Clarke, E., Zhang, J., & Tomic, S. (2007). Structure, morphology, and optical properties of GaxIn1−xN0.05As0.95 quantum wells:Influence of the growth mechanism. Physical review B: Condensed matter and materials physics, 76(8), 085309. https://doi.org/10.1103/PhysRevB.76.085309

• Journal Article Type: Article
• Publication Date: Jan 1, 2007
• Deposit Date: Nov 7, 2011
• Journal: Physical Review B (PRB)
• Print ISSN: 1098-0121
• Publisher: American Physical Society
• Peer Reviewed: Peer Reviewed
• Volume: 76
• Issue: 8
• Pages: 085309
• DOI: https://doi.org/10.1103/PhysRevB.76.085309
• Publisher URL: http://dx.doi.org/10.1103/PhysRevB.76.085309