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Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k⋅p theory and configuration-interaction method

Tomic, S; Vukmirović, N

Authors

S Tomic

N Vukmirović



Abstract

Received 2 March 2009; published 26 June 2009

Excitons and biexcitons in GaN/AlN quantum dots (QD) were investigated with special emphasis on the use of these QDs for single-photon source applications. The theoretical methodology for the calculation of single-particle states was based on 8-band strain-dependent envelope function Hamiltonian, with the effects of spin-orbit interaction, crystal-field splitting, and piezoelectric and spontaneous polarizations taken into account. Exciton and biexciton states were found using the configuration-interaction method. Optimal QD heights for their use in single-photon emitters were determined for various diameter to height ratios. The competition between strong confinement in GaN QDs and internal electric field, generally reported in wurtzite GaN, was also discussed, as well as its effect on appearance of bound biexcitons.

Citation

Tomic, S., & Vukmirović, N. (2009). Excitonic and biexcitonic properties of single GaN quantum dots modeled by 8-band k⋅p theory and configuration-interaction method. Physical review B: Condensed matter and materials physics, 79(24), 245330. https://doi.org/10.1103/PhysRevB.79.245330

Journal Article Type Article
Publication Date Jan 1, 2009
Deposit Date Nov 7, 2011
Journal Physical Review B (PRB)
Print ISSN 1098-0121
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 79
Issue 24
Pages 245330
DOI https://doi.org/10.1103/PhysRevB.79.245330
Publisher URL http://dx.doi.org/10.1103/PhysRevB.79.245330



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