Amorphous silicon solar cells made with SnO2:F TCO films deposited by atmospheric pressure CVD

Dagkaldiran, U; Gordijn, A; Finger, G; Yates, HM; Evans, P; Sheel, DW; Remes, Z; Vanecek, M

Abstract

In this paper we report the results of a study assessing a newly developed deposition process for Fdoped
SnO2 films by CVD operating at atmospheric pressure (APCVD). The technology is designed to be
compatible with industrial requirements such as high process speed, possible up-scaling to wide substrate
widths and low costs. The optical and electrical properties of layers deposited on glass are found to be
similar to those of commercially available lowpressure CVD. Optical absorptance below1% is achieved for
films of around 0.8�mthick. Such transparent conductive oxide (TCO) is used with a-Si:H single junction
p–i–n solar cells grown by PECVD. The cells are characterised by I–V measurements using AM1.5 spectra
and by measuring the external quantum efficiencies (EQE). The initial efficiencies were up to 9.3% with
FF = 73%. The TCO films demonstrated an enhanced performance in the EQE compared to commercially
available TCO (Asahi-U).

• Journal Article Type: Article
• Publication Date: Jan 1, 2009
• Deposit Date: Oct 21, 2011
• Journal: Materials Science and Engineering B
• Print ISSN: 0921-5107
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 159
• Pages: 6-9
• DOI: https://doi.org/10.1016/j.mseb.2008.10.037
• Publisher URL: http://dx.doi.org/10.1016/j.mseb.2008.10.037