Effects of D+ implantation of CIGS thin films through a CdS layer

Yakushev, MV; Martin, RW; Krustok, J; Mudriy, AV; Holman, D; Schock, HW; Pilkington, RD; Hill, AE; Tomlinson, RD

Abstract

Cu(InGa)Se2 thin films coated with a 30 nm CdS layer were implanted with doses of 1014–1016 cm−2 of 2.5 keV D+ at room temperature. Implanted and non-implanted areas of the films were characterised using low-temperature photoluminescence (PL). A broad band (A) at 1.07 eV, attributed to the band-tail recombination, dominated the PL spectra from the non-implanted material. Implantation of D+ generated four new transitions in the PL spectra: 3 low-energy peaks; and a dominant peak at 1.10 eV. The blue shift of the 1.10 eV band with excitation power rise was shown to be only half that of band A. This was attributed to the passivating effects of D+ on the amplitude of the band-tail potential fluctuations.

Citation

Yakushev, M., Martin, R., Krustok, J., Mudriy, A., Holman, D., Schock, H., …Tomlinson, R. (2001). Effects of D+ implantation of CIGS thin films through a CdS layer. Thin Solid Films, 387(1-2), 201-204. https://doi.org/10.1016/S0040-6090%2800%2901730-2

• Journal Article Type: Article
• Publication Date: May 29, 2001
• Deposit Date: Aug 23, 2007
• Journal: Thin Solid Films
• Print ISSN: 0040-6090
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 387
• Issue: 1-2
• Pages: 201-204
• DOI: https://doi.org/10.1016/S0040-6090%2800%2901730-2
• Keywords: Thin films; CIGS/CdS; Photoluminescence; Ion-implantation
• Publisher URL: http://dx.doi.org/10.1016/S0040-6090(00)01730-2
• Additional Information: Additional Information : DOI: 10.1016/S0040-6090(00)01730-2