Modification of the natural photonic bandgap of synthetic opals via infilling with crystalline InP

Yates, HM; Pemble, ME; Palacios-Lidón, E; Garcia-Santamaria, F; Rodriguez, I; Meseguer, FJ; López, C

Abstract

The growth of high-quality stoichiometric indium phosphide by atmospheric pressure metal±organic chemical vapor deposition
within thin-film artificial opals has been optimized. The optical properties of these systems have been studied as a function
of the filling fraction. A consistent behavior has been found which substantially differs from that of other common infilled
opals. The evolution of the InP morphology seems to be strongly correlated with this anomalous photonic response. At the first
infiltration stages, the growth leads to the formation of nanocrystallites that eventually, as the infiltration increases, coalesce
in single-crystalline grains of increasing size. The possibility to oxidize the material adds to its potential as a useful optical mate-
rial.

Citation

Yates, H., Pemble, M., Palacios-Lidón, E., Garcia-Santamaria, F., Rodriguez, I., Meseguer, F., & López, C. (2005). Modification of the natural photonic bandgap of synthetic opals via infilling with crystalline InP. Advanced functional materials, 15(3), 411-417. https://doi.org/10.1002/adfm.200400248

• Journal Article Type: Article
• Publication Date: Mar 1, 2005
• Deposit Date: Aug 23, 2007
• Journal: Advanced Functional Materials
• Print ISSN: 1616-301X
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 15
• Issue: 3
• Pages: 411-417
• DOI: https://doi.org/10.1002/adfm.200400248
• Publisher URL: http://dx.doi.org/10.1002/adfm.200400248