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Photonic crystal thin films of GaAs prepared by atomic layer deposition

Povey, IM; Whitehead, DE; Thomas, K; Pemble, ME; Bardosova, M; Renard, J

Authors

IM Povey

DE Whitehead

K Thomas

ME Pemble

M Bardosova

J Renard



Abstract

Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.

Citation

Povey, I., Whitehead, D., Thomas, K., Pemble, M., Bardosova, M., & Renard, J. (2006). Photonic crystal thin films of GaAs prepared by atomic layer deposition. Applied Physics Letters, 89(10), 104103. https://doi.org/10.1063/1.2345359

Journal Article Type Article
Publication Date Sep 4, 2006
Deposit Date Aug 23, 2007
Publicly Available Date Aug 23, 2007
Journal Applied Physics Letters
Print ISSN 0003-6951
Publisher AIP Publishing
Peer Reviewed Peer Reviewed
Volume 89
Issue 10
Pages 104103
DOI https://doi.org/10.1063/1.2345359
Keywords Gallium arsenide, III-V semiconductors, semiconductor thin films, photonic crystals, atomic layer deposition, self-assembly, etching, reflectivity, photonic band gap, refractive index
Publisher URL http://dx.doi.org/10.1063/1.2345359
Related Public URLs http://www.aip.org/
http://apl.aip.org/apl/top.jsp

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