Photonic crystal thin films of GaAs prepared by atomic layer deposition

Povey, IM; Whitehead, DE; Thomas, K; Pemble, ME; Bardosova, M; Renard, J

Abstract

Photonic crystal thin films were fabricated via the self-assembly of a lattice of silica spheres on silicon (100) substrates. Progressive infilling of the air spaces within the structure with GaAs was achieved using trimethylgallium and arsine under atomic-layer-deposition conditions. Samples with the highest levels of GaAs infill were subsequently inverted using selective etching. Reflectance spectra are interpreted via the Bragg expression and calculated photonic band structure diagrams. For GaAs infilled and inverted samples, the relative positions of the first and second order Bragg reflections are strongly influenced by the wavelength dependent refractive index.

Citation

Povey, I., Whitehead, D., Thomas, K., Pemble, M., Bardosova, M., & Renard, J. (2006). Photonic crystal thin films of GaAs prepared by atomic layer deposition. Applied Physics Letters, 89(10), 104103. https://doi.org/10.1063/1.2345359

• Journal Article Type: Article
• Publication Date: Sep 4, 2006
• Deposit Date: Aug 23, 2007
• Publicly Available Date: Aug 23, 2007
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Publisher: AIP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 89
• Issue: 10
• Pages: 104103
• DOI: https://doi.org/10.1063/1.2345359
• Keywords: Gallium arsenide, III-V semiconductors, semiconductor thin films, photonic crystals, atomic layer deposition, self-assembly, etching, reflectivity, photonic band gap, refractive index
• Publisher URL: http://dx.doi.org/10.1063/1.2345359
• Related Public URLs: http://www.aip.org/; http://apl.aip.org/apl/top.jsp