Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
(2020)
Journal Article
Zincblende InGaN/GaN quantum wells offer a potential improvement to the efficiency of green light emission by removing the strong electric fields present in similar structures. However, a high density of stacking faults may have an impact on the reco... Read More about Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells.