Damage formation and annealing studies of low energy ion implants in silicon using medium energy ion scattering
(2006)
Thesis
Werner, M. Damage formation and annealing studies of low energy ion implants in silicon using medium energy ion scattering. (Thesis). University of Salford, UK
The work described in this thesis concerns studies of damage and annealing processes in ion implanted Si, relevant for the formation of source / drain extensions in sub 100 nm CMOS devices. Implants were carried out using 1-3 keV As, BF2 and Sb io... Read More about Damage formation and annealing studies of low energy ion implants in silicon using medium energy ion scattering.