The application of MEIS for the physical characterisation of high-k ultra thin dielectric layers in microelectronic devices
(2010)
Thesis
Reading, M. The application of MEIS for the physical characterisation of high-k ultra thin dielectric layers in microelectronic devices. (Thesis). Salford : University of Salford
During the last decade the use of 8162 as gate dielectric layers in complementary metal oxide semiconductor (CMOS) microelectronic devices has become increasingly problematic due to leakage resulting from the electron tunnelling... Read More about The application of MEIS for the physical characterisation of high-k ultra thin dielectric layers in microelectronic devices.