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A transmission electron microscopy study of the interaction between defects in amorphous silicon and a moving crystalline/amorphous interface (2008)
Thesis
Gandy, A. A transmission electron microscopy study of the interaction between defects in amorphous silicon and a moving crystalline/amorphous interface. (Thesis). University of Salford, UK/Universite de Poitiers, France

Transmission electron microscopy (TEM) has been used to investigate the damage produced following high temperature (350°C) Xe implantation into (100) Si at fluence (>lx!0 16 Xe ions/cm 2 ) and energy (250keV) which produce a buried amorphous layer... Read More about A transmission electron microscopy study of the interaction between defects in amorphous silicon and a moving crystalline/amorphous interface.