High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass (2022)
Journal Article
Hughes, M., McMaster, R., Proctor, J., Hewak, D., Suzuki, T., & Oshidi, Y. (2022). High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass. High Pressure Research, https://doi.org/10.1080/08957959.2022.2044031

We report the effects of high pressure, up to 10.45 GPa, on the photoluminescence of Bi-doped yttria-alumina-silica (Bi:YAlSi) glass under 532 nm excitation. We identify three emission bands attributed to Bi3+, Bi+ and the controversial NIR emitting... Read More about High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass.

Spin echo from erbium implanted silicon (2021)
Journal Article
Hughes, M. A., Panjwani, N. A., Urdampilleta, M., Homewood, K. P., Murdin, B., & Carey, J. D. (2021). Spin echo from erbium implanted silicon. Applied Physics Letters, 118(19), 194001. https://doi.org/10.1063/5.0046904

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3 × 1017 cm−3 and O to a concentration of 1020 cm−3, the electron spi... Read More about Spin echo from erbium implanted silicon.

Optically modulated magnetic resonance of erbium implanted silicon (2019)
Journal Article
Hughes, M., Li, H., Theodoropoulou, N., & Carey, J. (2019). Optically modulated magnetic resonance of erbium implanted silicon. Scientific reports, 9(1), 19031. https://doi.org/10.1038/s41598-019-55246-z

Er implanted Si is an important candidate for quantum and photonic applications, but the Er centres involved are poorly understood, which has hindered development of these applications. Here we present the first measurement of the crystal field split... Read More about Optically modulated magnetic resonance of erbium implanted silicon.

Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics (2016)
Journal Article
Hughes, M., Lourenco, M., Lai, K., Sofi, I., Ludurczak, W., Wong, L., …Homewood, K. (2016). Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics. Advanced functional materials, 26(12), 1986-1994. https://doi.org/10.1002/adfm.201504662

Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare-earth (RE) impl... Read More about Silicon-Modified rare-earth transitions - a new route to Near- and Mid-IR Photonics.