High pressure photoluminescence of bismuth-doped yttria-alumina-silica glass

Hughes, MA; McMaster, R; Proctor, JE; Hewak, DC; Suzuki, T; Oshidi, Y

Abstract

We report the effects of high pressure, up to 10.45 GPa, on the photoluminescence of Bi-doped yttria-alumina-silica (Bi:YAlSi) glass under 532 nm excitation. We identify three emission bands attributed to Bi3+, Bi+ and the controversial NIR emitting Bi centre, BiNIR. As the pressure is increased up to ~6 GPa, an irreversible discontinuity in the trend for emission band energies indicates that an irreversible structural modification occurs. This irreversible discontinuity results in the peak energy of emission bands attributed to Bi+ and BiNIR shifting from those typical of Bi-doped oxide glasses to those observed in Bi-doped gallium-lanthanum-sulfide (Bi:GaLaS) glass. The Bi3+ emission band can be almost eliminated at ~6 GPa, but its intensity increases rapidly as the pressure in further increased. The ability we report here to irreversibly modify the emission of Bi-doped glass using pressure treatment adds an extra degree of freedom in the processing parameters available to researchers looking to optimize the emission from Bi-doped glasses.

• Journal Article Type: Article
• Acceptance Date: Feb 15, 2022
• Online Publication Date: Feb 27, 2022
• Publication Date: Feb 27, 2022
• Deposit Date: Feb 23, 2022
• Publicly Available Date: Mar 1, 2022
• Journal: High Pressure Research
• Print ISSN: 0895-7959
• Electronic ISSN: 1477-2299
• Publisher: Taylor and Francis
• DOI: https://doi.org/10.1080/08957959.2022.2044031
• Publisher URL: https://doi.org/10.1080/08957959.2022.2044031
• Related Public URLs: http://www.tandfonline.com/toc/ghpr20/current
• Additional Information: Funders : Engineering and Physical Sciences Research Council (EPSRC); Projects : Manufacturing and Application of Next Generation Chalcogenides; Grant Number: EP/M015130/1