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Crystal field analysis of Dy and Tm implanted
silicon for photonic and quantum technologies

Hughes, MA; Lourenço, MA; Carey, JD; Murdin, B; Homewood, KP

Crystal field analysis of Dy and Tm implanted
silicon for photonic and quantum technologies Thumbnail


Authors

MA Lourenço

JD Carey

B Murdin

KP Homewood



Abstract

We report the lattice site and symmetry of optically active Dy3+
and Tm3+ implanted Si. Local symmetry was determined by fitting crystal
field parameters (CFPs), corresponding to various common symmetries, to
the ground state splitting determined by photoluminescence measurements.
These CFP values were then used to calculate the splitting of every J
manifold. We find that both Dy and Tm ions are in a Si substitution site
with local tetragonal symmetry. Knowledge of rare-earth ion symmetry is
important in maximising the number of optically active centres and for
quantum technology applications where local symmetry can be used to
control decoherence.

Citation

silicon for photonic and quantum technologies. Optics express, 22(24), 29292-29303. https://doi.org/10.1364/OE.22.029292

Journal Article Type Article
Acceptance Date Nov 6, 2014
Publication Date Nov 17, 2014
Deposit Date Nov 10, 2015
Publicly Available Date Nov 18, 2019
Journal Optics Express
Print ISSN 1094-4087
Electronic ISSN 1094-4087
Publisher Optical Society of America
Volume 22
Issue 24
Pages 29292-29303
DOI https://doi.org/10.1364/OE.22.029292
Publisher URL http://dx.doi.org/10.1364/OE.22.029292
Related Public URLs https://www.osapublishing.org/oe/issue.cfm
Additional Information Funders : Engineering and Physical Sciences Research Council (EPSRC)

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