Electroluminescence from an electrostatically doped
carbon nanotube field-effect transistor

Hughes, MA; Ohno, Y; Mizutani2, T

Abstract

We report electroluminescence (EL) from a carbon nanotube field-effect transistor with split-gates.
EL is generated by the electrostatic doping technique. Six EL bands could be observed, with the
strongest band peaking between 0.867 and 0.850 eV with a full width at half maximum (FWHM) of
64 to 120 meV, depending on the bias conditions. From the EL peak position we estimate a CNT
diameter of ∼1.05 nm. We also estimate the power and quantum efficiency of the EL to be around
1×10−6 and 1×10−5 respectively. With a fixed drain voltage, increasing the opposite split gate bias
caused the EL to increase monotonically from zero, indicating an ambipolar emission mechanism.
With a fixed opposite split gate bias the dependence of EL on drain voltage displays a threshold.
Drain current is significantly higher when using equal, rather than opposite split gate biases, which
we attribute to the trapping of carries by band bending when using opposite split gate bias.

Citation

carbon nanotube field-effect transistor. Nanoscience and Nanotechnology Letters, 6(10), 881-886. https://doi.org/10.1166/nnl.2014.1831

• Journal Article Type: Article
• Publication Date: Oct 1, 2014
• Deposit Date: Nov 10, 2015
• Journal: Nanoscience and Nanotechnology Letters
• Print ISSN: 1941-4900
• Electronic ISSN: 1941-4919
• Publisher: American Scientific Publishers
• Volume: 6
• Issue: 10
• Pages: 881-886
• DOI: https://doi.org/10.1166/nnl.2014.1831
• Publisher URL: http://dx.doi.org/10.1166/nnl.2014.1831
• Related Public URLs: http://www.aspbs.com/nnl.htm
• Additional Information: Funders : MEXT