Annealing of isolated amorphous zones in silicon
(2003)
Journal Article
Donnelly, S., Birtcher, R., Vishnyakov, V., & Carter, G. (2003). Annealing of isolated amorphous zones in silicon. Applied Physics Letters, 82(12), 1860-1862. https://doi.org/10.1063/1.1562336
In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphou... Read More about Annealing of isolated amorphous zones in silicon.