Electronic structure of InyGa1−yAs1−xNx∕GaAs(N) quantum dots by ten-band k∙p theory
(2006)
Journal Article
Tomic, S. (2006). Electronic structure of InyGa1−yAs1−xNx∕GaAs(N) quantum dots by ten-band k∙p theory. Physical review B: Condensed matter and materials physics, 73(12), 125348. https://doi.org/10.1103/PhysRevB.73.125348
We present a theoretical study of the electronic and optical properties of InGaAsN∕GaAs quantum dot structures. The calculations are based on a 10×10 k∙p band anticrossing Hamiltonian, incorporating valence, conduction, and nitrogen-induced bands. Nu... Read More about Electronic structure of InyGa1−yAs1−xNx∕GaAs(N) quantum dots by ten-band k∙p theory.