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Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon

Peach, T; Stockbridge, K; Li, J; Lourenco, MA; Homewood, KP; Hughes, MA; Murdin, BN; Chick, S; Clowes, SK

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Authors

T Peach

K Stockbridge

J Li

MA Lourenco

KP Homewood

BN Murdin

S Chick

SK Clowes



Abstract

This study reports the effect of an increasing ion dose on both the electrical activation yield and the characteristic properties of implanted bismuth donors in silicon. A strong dependence of implant fluence is observed on both the yield of bismuth donors and the measured impurity diffusion. This is such that higher ion concentrations result in both a decrease in activation and an enhancement in donor migration through interactions with mobile silicon lattice vacancies and interstitials. Furthermore, the effect of implant fluence on the properties of the Si:Bi donor bound exciton, D0X, is also explored using photoluminescence (PL) measurements. In the highest density sample, centers corresponding to the PL of bismuth D0Xs within both the high density region and the lower concentration diffused tail of the implanted donor profile are identifiable.

Citation

Peach, T., Stockbridge, K., Li, J., Lourenco, M., Homewood, K., Hughes, M., …Clowes, S. (2019). Enhanced diffusion and bound exciton interactions of high density implanted bismuth donors in silicon. Applied Physics Letters, 115(7), 072102. https://doi.org/10.1063/1.5115835

Journal Article Type Article
Acceptance Date Jul 18, 2019
Publication Date Aug 12, 2019
Deposit Date Aug 13, 2019
Publicly Available Date Aug 13, 2019
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher AIP Publishing
Volume 115
Issue 7
Pages 072102
DOI https://doi.org/10.1063/1.5115835
Publisher URL https://doi.org/10.1063/1.5115835
Related Public URLs https://aip.scitation.org/journal/apl
Additional Information Funders : Engineering and Physical Sciences Research Council (EPSRC)
Projects : ADDRFSS
Grant Number: EP/M009564/1

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