Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors

Pal, J; Tse, G; Haxha, V; Migliorato, MA; Tomic, S

Abstract

The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated as a function of strain. Using an ab initio density functional theory (DFT), we concentrate on the internal displacement (u) and Born effective charge (Z*) and show that our model provides a unique non linear dependence of the III-N material properties as a function of strain.

Citation

Pal, J., Tse, G., Haxha, V., Migliorato, M., & Tomic, S. (2012). Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors. Journal of Physics: Conference Series, 367, 012006. https://doi.org/10.1088/1742-6596/367/1/012006

• Journal Article Type: Article
• Acceptance Date: May 11, 2012
• Publication Date: May 21, 2012
• Deposit Date: Apr 6, 2016
• Journal: Journal of Physics: Conference Series
• Print ISSN: 1742-6588
• Electronic ISSN: 1742-6596
• Publisher: IOP Publishing
• Volume: 367
• Pages: 012006
• DOI: https://doi.org/10.1088/1742-6596/367/1/012006
• Publisher URL: http://dx.doi.org/10.1088/1742-6596/367/1/012006