Photocurrent from a carbon nanotube diode with splitgate
and asymmetric contact geometry

Hughes, MA; Homewood, KP; Curry, RJ; Ohno, Y; Mizutani, T

Abstract

We fabricated a Ti/Pd asymmetrically contacted single carbon nanotube (CNT)
field-effect transistor (FET) with split-gates. Transfer characteristics can be
explained if the Schottky barrier for electrons is lower at the Pd contact than it is
at the Ti contact. Strong rectification is observed when the gates are unbiased,
and the rectification direction can be inverted with the appropriate gate bias.
When operated as an FET the device has an on/off ratio of 1 × 107. Under
illumination, photocurrent can only be observed with opposite split-gate bias.
Open circuit voltage (VOC) and short circuit current (ISC) increase with
increasing opposite polarity split-gate bias, representing the first demonstration
of the modulation of VOC and ISC in an asymmetric contact CNT FET.

Citation

and asymmetric contact geometry. Materials Research Express, 1(2), 026304. https://doi.org/10.1088/2053-1591/1/2/026304

• Journal Article Type: Article
• Acceptance Date: Apr 16, 2014
• Publication Date: May 20, 2014
• Deposit Date: Nov 10, 2015
• Journal: Materials Research Express
• Electronic ISSN: 2053-1591
• Publisher: IOP Publishing
• Volume: 1
• Issue: 2
• Pages: 026304
• DOI: https://doi.org/10.1088/2053-1591/1/2/026304
• Publisher URL: http://dx.doi.org/10.1088/2053-1591/1/2/026304
• Related Public URLs: http://iopscience.iop.org/2053-1591/
• Additional Information: Funders : MEXT