Dr Mark Hughes M.A.Hughes@salford.ac.uk
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n-type chalcogenides by ion implantation
Hughes, MA; Fedorenko, Y; Gholipour, B; Yao, J; Lee, TH; Gwilliam, RM; Homewood, KP; Hinder, S; Hewak, DW; Elliott, SR; Curry, RJ
Authors
Y Fedorenko
B Gholipour
J Yao
TH Lee
RM Gwilliam
KP Homewood
S Hinder
DW Hewak
SR Elliott
RJ Curry
Abstract
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite
for many electronic applications. Chalcogenide glasses are p-type semiconductors and their
applications have been limited by the extraordinary difficulty in obtaining n-type conductivity.
The ability to form chalcogenide glass p-n junctions could improve the performance of
phase-change memory and thermoelectric devices and allow the direct electronic control of
nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh
(Ch¼S, Se, Te) family of glasses, with very high Bi or Pb ‘doping’ concentrations (B5–11
at.%), incorporated during high-temperature glass melting. Here we report the first n-type
doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous
films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device.
The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi
melt-doped GeCh glasses.
Citation
Hughes, M., Fedorenko, Y., Gholipour, B., Yao, J., Lee, T., Gwilliam, R., …Curry, R. (2014). n-type chalcogenides by ion implantation. Nature communications, 5, 5346. https://doi.org/10.1038/ncomms6346
Journal Article Type | Article |
---|---|
Acceptance Date | Sep 22, 2014 |
Publication Date | Nov 7, 2014 |
Deposit Date | Nov 10, 2015 |
Publicly Available Date | Apr 5, 2016 |
Journal | Nature Communications |
Print ISSN | 2041-1723 |
Electronic ISSN | 2041-1723 |
Volume | 5 |
Pages | 5346 |
DOI | https://doi.org/10.1038/ncomms6346 |
Publisher URL | http://dx.doi.org/10.1038/ncomms6346 |
Related Public URLs | http://www.nature.com/ncomms/index.html |
Additional Information | Funders : Engineering and Physical Sciences Research Council (EPSRC) Grant Number: EP/I018417/1, EP/I019065/1 and EP/I018050/1 |
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