Ion-implantation-enhanced chalcogenide-glass resistive-switching devices

Hughes, MA; Fedorenko, Y; Gwilliam, GM; Homewood, KP; Hinder, S; Gholipour, B; Hewak, DW; Lee, TH; Elliott, SR; Curry, RJ

Abstract

We report amorphous GaLaSO-based resistive switching devices, with and without
Pb-implantation before deposition of an Al active electrode, which switch due to deposition and
dissolution of Al metal filaments. The devices set at 2–3 and 3–4V with resistance ratios of 6�104
and 3�109 for the unimplanted and Pb-implanted devices, respectively. The devices reset under
positive Al electrode bias, and Al diffused 40 nm further into GaLaSO in the unimplanted device.
We attribute the positive reset and higher set bias, compared to devices using Ag or Cu active electrodes,
to the greater propensity of Al to oxidise.

Citation

Hughes, M., Fedorenko, Y., Gwilliam, G., Homewood, K., Hinder, S., Gholipour, B., …Curry, R. (2014). Ion-implantation-enhanced chalcogenide-glass resistive-switching devices. Applied Physics Letters, 105, 083506. https://doi.org/10.1063/1.4894245

• Journal Article Type: Article
• Acceptance Date: Aug 6, 2014
• Publication Date: Aug 27, 2014
• Deposit Date: Nov 10, 2015
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: AIP Publishing
• Volume: 105
• Pages: 083506
• DOI: https://doi.org/10.1063/1.4894245
• Publisher URL: http://dx.doi.org/10.1063/1.4894245
• Related Public URLs: http://scitation.aip.org/content/aip/journal/apl
• Additional Information: Funders : Engineering and Physical Sciences Research Council (EPSRC); Grant Number: EP/I018414/1, EP/I019065/1, and EP/I018050/1