An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry

Hughes, MA; Homewood, KP; Curry, RJ; Ohno, Y

Abstract

A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I0) of 6 × 10−16 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I0 and η were 2 × 10−14 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact.

Citation

Hughes, M., Homewood, K., Curry, R., & Ohno, Y. (2013). An ultra-low leakage current single carbon nanotube diode with split-gate and asymmetric contact geometry. Applied Physics Letters, 103(13), 133508. https://doi.org/10.1063/1.4823602

• Journal Article Type: Article
• Acceptance Date: Sep 15, 2013
• Publication Date: Sep 27, 2013
• Deposit Date: Nov 10, 2015
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: AIP Publishing
• Volume: 103
• Issue: 13
• Pages: 133508
• DOI: https://doi.org/10.1063/1.4823602
• Publisher URL: http://dx.doi.org/10.1063/1.4823602
• Related Public URLs: http://scitation.aip.org/content/aip/journal/apl; http://scitation.aip.org/content/aip
• Additional Information: Funders : MEXT