Intersubband gain without global inversion through dilute nitride band engineering

Pereira, M; Tomic, S

Abstract

We investigate the possibility of interconduction band gain without global inversion by engineering the conduction band effective masses so that the upper lasing subband has an effective mass considerably smaller than the lower lasing subband that could not be obtained in conventional III-V materials. We recover the expected dispersive gain shape for similar masses and contrasting results if the effective masses characterizing the relevant subbands are very different.

Citation

Pereira, M., & Tomic, S. (2011). Intersubband gain without global inversion through dilute nitride band engineering. Applied Physics Letters, 98(6), 061101. https://doi.org/10.1063/1.3552204

• Journal Article Type: Article
• Publication Date: Jan 1, 2011
• Deposit Date: Oct 25, 2011
• Publicly Available Date: Apr 5, 2016
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Publisher: AIP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 98
• Issue: 6
• Pages: 061101
• DOI: https://doi.org/10.1063/1.3552204
• Publisher URL: http://dx.doi.org/10.1063/1.3552204