Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design

Tomic, S; Jones, T; Harrison, N

Abstract

We present a theoretical study of the electronic and absorption properties of the intermediate band (IB) formed by a three dimensional structure of InAs/GaAs quantum dots (QDs) arranged in a periodic array. Analysis of the electronic and absorption structures suggests that the most promising design for an IB solar cell material, which will exhibit its own quasi-Fermi level, is to employ small QDs (~6–12 nm QD lateral size). The use of larger QDs leads to extension of the absorption spectra into a longer wavelength region but does not provide a separate IB in the forbidden energy gap.

Citation

Tomic, S., Jones, T., & Harrison, N. (2008). Absorption characteristics of a quantum dot array induced intermediate band: Implications for solar cell design. Applied Physics Letters, 93(26), 263105. https://doi.org/10.1063/1.3058716

• Journal Article Type: Article
• Publication Date: Jan 1, 2008
• Deposit Date: Oct 25, 2011
• Publicly Available Date: Apr 5, 2016
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Publisher: AIP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 93
• Issue: 26
• Pages: 263105
• DOI: https://doi.org/10.1063/1.3058716
• Publisher URL: http://dx.doi.org/10.1063/1.3058716