Optical properties of SnO2:F films deposited by atmospheric pressure CVD

Remes, Z; Vanecek, M; Yates, HM; Evans, P; Sheel, DW

Abstract

SnO2 thin films, is compatible with industrial requirements such as high process speed, scaling to wide
substrate widths and low costs. Precise method for measuring the optical absorptance in the spectral range
300–1700 nm combines transmittance, reflectance and photothermal deflection (PDS) spectra measured on
the same spot of the sample immersed in the transparent liquid with a relatively high index of refraction. The
effects of the film thickness, doping gas addition and the susceptor temperature on the optical absorptance
and electrical resistivity of the TCO films are assessed. We show that the doping gas concentration and the
susceptor temperature influence both the incorporation ratio of dopants into SnO2 film as well as the defect
concentration. The SnO2 films growth at optimum APCVD conditions have thickness 0.7 μm, average surface
roughness about 40 nm, sheet electrical resistance 10 Ω/sq and the optical absorption 1% at 500 nm and
about 5% at 1000 nm.

Citation

Remes, Z., Vanecek, M., Yates, H., Evans, P., & Sheel, D. (2009). Optical properties of SnO2:F films deposited by atmospheric pressure CVD. Thin Solid Films, 517(23), 6287-6289. https://doi.org/10.1016/j.tsf.2009.02.109

• Journal Article Type: Article
• Publication Date: Jan 1, 2009
• Deposit Date: Oct 21, 2011
• Journal: Thin Solid Films
• Print ISSN: 0040-6090
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 517
• Issue: 23
• Pages: 6287-6289
• DOI: https://doi.org/10.1016/j.tsf.2009.02.109
• Publisher URL: http://dx.doi.org/10.1016/j.tsf.2009.02.109