Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structure

Lunca-Popa, P; Brand, JI; Balaz, S; Rosa, LG; Boag, NM; Bai, M; Robertson, BW; Dowben, PA

Abstract

Boron carbides fabricated via plasma enhanced chemical vapour deposition from different isomeric source compounds with the same C2B10H12 closo-icosahedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes of C2B10 boron carbide and is consistent with electron diffraction results.

Citation

Lunca-Popa, P., Brand, J., Balaz, S., Rosa, L., Boag, N., Bai, M., …Dowben, P. (2005). Evidence for multiple polytypes of semiconducting boron carbide (C2B10) from electronic structure. Journal of Physics D: Applied Physics, 38(8), 1248-1252. https://doi.org/10.1088/0022-3727/38/8/023

• Journal Article Type: Article
• Publication Date: Apr 21, 2005
• Deposit Date: Sep 7, 2007
• Journal: Journal of Physics D: Applied Physics
• Print ISSN: 0022-3727
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 38
• Issue: 8
• Pages: 1248-1252
• DOI: https://doi.org/10.1088/0022-3727/38/8/023
• Publisher URL: http://dx.doi.org/10.1088/0022-3727/38/8/023