Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and F

Werner, M; van den Berg, JA; Armour, DG; Carter, G; Feudel, T; Herden, M; Bersani, M; Giubertoni, D; Ottaviano, L; Bongiorno, C; Mannino, G; Bailey, P; Noakes, TCQ

Abstract

Si(100) samples, preamorphized to a depth of ~30 nm using 20 keV Xe ions to a nominal fluence of 2×1014 cm-2 were implanted with 1 and 3 keV BF2 ions to fluences of 7×1014 cm-2. Following annealing over a range of temperatures (from 600 to 1130 °C) and times the implant redistribution was investigated using medium-energy ion scattering (MEIS), secondary ion mass spectrometry (SIMS), and energy filtered transmission electron microscopy (EFTEM). MEIS studies showed that for all annealing conditions leading to solid phase epitaxial regrowth, approximately half of the Xe had accumulated at depths of 7 nm for the 1 keV and at 13 nm for the 3 keV BF2 implant. These depths correspond to the end of range of the B and F within the amorphous Si. SIMS showed that in the preamorphized samples, approximately 10% of the F migrates into the bulk and is trapped at the same depths in a ~1:1 ratio to Xe. These observations indicate an interaction between the Xe and F implants and a damage structure that becomes a trapping site. A small fraction of the implanted B is also trapped at this depth. EXTEM micrographs suggest the development of Xe agglomerates at the depths determined by MEIS. The effect is interpreted in terms of the formation of a volume defect structure within the amorphized Si, leading to F stabilized Xe agglomerates or XeF precipitates.

Citation

Werner, M., van den Berg, J., Armour, D., Carter, G., Feudel, T., Herden, M., …Noakes, T. (2005). Shallow BF2 implants in Xe-bombardment-preamorphized Si: the interaction between Xe and F. Applied Physics Letters, 86(15), 151904. https://doi.org/10.1063/1.1900305

• Journal Article Type: Article
• Publication Date: Apr 11, 2005
• Deposit Date: Aug 23, 2007
• Publicly Available Date: Aug 23, 2007
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Publisher: AIP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 86
• Issue: 15
• Pages: 151904
• DOI: https://doi.org/10.1063/1.1900305
• Keywords: Silicon, boron compounds, xenon, elemental semiconductors, amorphous semiconductors, ion implantation, ion-surface impact, annealing, secondary ion mass spectra, transmission electron microscopy, impurity distribution
• Publisher URL: http://link.aip.org/link/?APPLAB/86/151904/1
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