Third-order nonlinearity in silicon beyond 2350 nm

Gholami, F.; Zlatanovic, S.; Simic, A.; Liu, L.; Borlaug, D.; Alic, N.; Nezhad, M.P.; Fainman, Y.; Radic, S.

Abstract

Measurement of the Kerr nonlinearity in silicon is reported in the 2350 nm to 2750 nm wavelength range, where three-photon absorption effect is present. The measurements confirm that the Kerr interaction strength is comparable to that in the near-infrared. The measured dispersion trend for the Kerr coefficient is consistent with that obtained using Kramers-Krönig relations. Three-photon absorption was measured, and its effect on the nonlinear figure of merit in silicon appears not to be as restrictive as that of two-photon absorption. The results identify silicon as a promising platform for parametric processes in mid-infrared spectral region.

• Journal Article Type: Article
• Acceptance Date: Aug 8, 2011
• Online Publication Date: Aug 22, 2011
• Publication Date: Aug 22, 2011
• Deposit Date: Aug 21, 2024
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: AIP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 99
• Issue: 8
• DOI: https://doi.org/10.1063/1.3630130