Room temperature lasing from subwavelength metal-insulator-semiconductor structures

Nezhad, M.P.; Simic, A.; Bondarenko, O.; Slutsky, B.; Mizrahi, A.; Feng, L.; Lomakin, V.; Fainman, Y.

Abstract

We report pulsed room temperature lasing from optically pumped subwavelength metal-insulator-semiconductor structures. The lasers consist of InGaAsP gain disks embedded in a SiO 2 /aluminum bi-layer. Lasing at 1520 nm from a 730 nm gain core is demonstrated.

Citation

Nezhad, M., Simic, A., Bondarenko, O., Slutsky, B., Mizrahi, A., Feng, L., …Fainman, Y. (2009). Room temperature lasing from subwavelength metal-insulator-semiconductor structures. In 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference. https://doi.org/10.1364/CLEO.2009.CMD2

• Conference Name: 2009 Conference on Lasers and Electro-Optics (CLEO)
• Conference Location: Baltimore, MD, USA
• Start Date: Jun 2, 2009
• End Date: Jun 4, 2009
• Online Publication Date: Aug 28, 2009
• Publication Date: 2009
• Deposit Date: Aug 21, 2024
• Publisher: Institute of Electrical and Electronics Engineers
• Series ISSN: 2160-9004
• Book Title: 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference
• ISBN: 978-1-55752-869-8
• DOI: https://doi.org/10.1364/CLEO.2009.CMD2