L. Pang
Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8
Pang, L.; Nezhad, M.; Levy, U.; Tsai, C.; Fainman, Y.
Authors
Dr Maziar Nezhad M.P.Nezhad@salford.ac.uk
Professor Nanophotonics Microsystems Eng
U. Levy
C. Tsai
Y. Fainman
Abstract
We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 mm wavelength was designed, fabricated and characterized.
Presentation Conference Type | Conference Paper (published) |
---|---|
Conference Name | MOEMS-MEMS Micro and Nanofabrication |
Start Date | Jan 22, 2005 |
End Date | Jan 27, 2005 |
Publication Date | 2005 |
Deposit Date | Aug 21, 2024 |
Publisher | Society of Photo-optical Instrumentation Engineers |
Volume | 5720 |
Pages | 252-260 |
Book Title | Micromachining Technology for Micro-Optics and Nano-Optics III |
DOI | https://doi.org/10.1117/12.590564 |
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