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Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8

Pang, L.; Nezhad, M.; Levy, U.; Tsai, C.; Fainman, Y.

Authors

L. Pang

U. Levy

C. Tsai

Y. Fainman



Abstract

We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 mm wavelength was designed, fabricated and characterized.

Presentation Conference Type Conference Paper (published)
Conference Name MOEMS-MEMS Micro and Nanofabrication
Start Date Jan 22, 2005
End Date Jan 27, 2005
Publication Date 2005
Deposit Date Aug 21, 2024
Publisher Society of Photo-optical Instrumentation Engineers
Volume 5720
Pages 252-260
Book Title Micromachining Technology for Micro-Optics and Nano-Optics III
DOI https://doi.org/10.1117/12.590564