Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8

Pang, L.; Nezhad, M.; Levy, U.; Tsai, C.; Fainman, Y.

Abstract

We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 mm wavelength was designed, fabricated and characterized.

Citation

Pang, L., Nezhad, M., Levy, U., Tsai, C., & Fainman, Y. (2005). Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8. In Micromachining Technology for Micro-Optics and Nano-Optics III (252-260). https://doi.org/10.1117/12.590564

• Conference Name: MOEMS-MEMS Micro and Nanofabrication
• Conference Location: San Jose, CA, USA
• Start Date: Jan 22, 2005
• End Date: Jan 27, 2005
• Publication Date: 2005
• Deposit Date: Aug 21, 2024
• Publisher: Society of Photo-optical Instrumentation Engineers
• Volume: 5720
• Pages: 252-260
• Book Title: Micromachining Technology for Micro-Optics and Nano-Optics III
• DOI: https://doi.org/10.1117/12.590564