Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask

Pang, L.; Nezhad, M.; Levy, U.; Tsai, C.-H.; Fainman, Y.

Abstract

A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-µm wavelength was produced and evaluated.

Citation

Pang, L., Nezhad, M., Levy, U., Tsai, C.-H., & Fainman, Y. (2005). Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask. Applied Optics, 44(12), 2377-2381. https://doi.org/10.1364/AO.44.002377

• Journal Article Type: Article
• Publication Date: 2005
• Deposit Date: Aug 21, 2024
• Journal: Applied Optics
• Print ISSN: 1559-128X
• Electronic ISSN: 2155-3165
• Publisher: Optical Society of America
• Peer Reviewed: Peer Reviewed
• Volume: 44
• Issue: 12
• Pages: 2377-2381
• DOI: https://doi.org/10.1364/AO.44.002377