Rapid quench annealing of Er implanted Si for quantum networking applications

Hughes, Mark A; Liu, Huan; Brookfield, Adam; Wang, Tianrui; Crowe, Iain F; Dan, Yaping

Abstract

Erbium-implanted silicon (Er:Si) holds promise for quantum networking, but the formation of multiple Er centers poses a challenge. We show that the cubic center (Er-C) has C 2v or lower symmetry and propose all Er centers range between full Si-and full O-coordination. By co-implanting Si with Er and O (both 10 19 cm −3) and increasing the thermal anneal quenching rate from ∼100 °C/s to ∼1000 °C/s, we shifted the dominant optically active center from Er 2 O 3 clusters to the Er-C center with mixed Si and O coordination. Temperature-dependent photoluminescence reveals Er 2 O 3 clusters and Er-C centers have O-related defect states at ∼200 and 90 meV above the 4 I 13/2 Er manifold, respectively.

• Journal Article Type: Article
• Acceptance Date: Dec 18, 2024
• Online Publication Date: Dec 19, 2024
• Publication Date: Dec 30, 2024
• Deposit Date: Jun 13, 2025
• Publicly Available Date: Jun 13, 2025
• Journal: Optics Express
• Print ISSN: 1094-4087
• Publisher: Optical Society of America
• Peer Reviewed: Peer Reviewed
• Volume: 32
• Issue: 27
• Article Number: 48353
• DOI: https://doi.org/10.1364/oe.540726