All Outputs (2)

The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon (2018)
Journal Article
Peach, T., Homewood, K., Lourenco, M., Hughes, M., Saeedi, K., Stavrias, N., …Clowes, S. (2018). The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon. Advanced Quantum Technologies, 1(2), 1800038. https://doi.org/10.1002/qute.201800038

This study reports on high energy bismuth ion implantation into silicon with a particular emphasis on the effect that annealing conditions have on the observed hyperfine structure of the Si:Bi donor state. A suppression of donor bound exciton, D0X, p... Read More about The effect of lattice damage and annealing conditions on the hyperfine structure of ion implanted bismuth donors in silicon.

High speed chalcogenide glass electrochemical metallization cells with various active metals (2018)
Journal Article
Hughes, M., Burgess, A., Hinder, S., Gholizadeh, A., Craig, C., & Hewak, D. (2018). High speed chalcogenide glass electrochemical metallization cells with various active metals. Nanotechnology, 29(31), #315202. https://doi.org/10.1088/1361-6528/aac483

We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent a... Read More about High speed chalcogenide glass electrochemical metallization cells with various active metals.