All Outputs (3)

A transmission electron microscopy study of inert gases in silicon and iron (2012)
Thesis
Greaves, G. A transmission electron microscopy study of inert gases in silicon and iron. (Thesis). University of Salford

This thesis presents a study of inert gas inclusion in iron and silicon, as a result of ion
implantation. The effect of ion implantation conditions on the formation and
development of inert gas bubbles within these solids has been explored, and the... Read More about A transmission electron microscopy study of inert gases in silicon and iron.

A transmission electron microscopy study of the interaction between defects in amorphous silicon and a moving crystalline/amorphous interface (2008)
Thesis
Gandy, A. A transmission electron microscopy study of the interaction between defects in amorphous silicon and a moving crystalline/amorphous interface. (Thesis). University of Salford, UK/Universite de Poitiers, France

Transmission electron microscopy (TEM) has been used to investigate the
damage produced following high temperature (350°C) Xe implantation into (100)
Si at fluence (>lx!0 16 Xe ions/cm 2 ) and energy (250keV) which produce a buried
amorphous layer... Read More about A transmission electron microscopy study of the interaction between defects in amorphous silicon and a moving crystalline/amorphous interface.

Radiation damage in copper indium diselenide (2007)
Thesis
Hinks, J. Radiation damage in copper indium diselenide. (Thesis). University of Salford

A study of radiation damage in copper indium diselenide (CIS) is presented. The
build up of extended defects and the conditions for amorphisation have been
explored. In particular, dislocation loops have been characterised and the
influence of com... Read More about Radiation damage in copper indium diselenide.