Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures
(2002)
Journal Article
van den Berg, J., Armour, D., Zhang, S., Whelan, S., Ohno, H., Wang, T., …Noakes, T. (2002). Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures. https://doi.org/10.1116/1.1477420
High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of dynamic defect annealing on the damage formed in silicon substrates irradiated with ultralow energy ions (1 keV B+, 2.5 keV As+). Samples were implant... Read More about Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures.