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Numerical simulation of hydromagnetic Marangoni convection flow in a Darcian porous semiconductor melt enclosure with buoyancy and heat generation effects

Beg, OA; Venkatadri, K; Prasad, VR; Beg, TA; Kadir, A; Leonard, HJ

Numerical simulation of hydromagnetic Marangoni convection flow in a Darcian porous semiconductor melt enclosure with buoyancy and heat generation effects Thumbnail


Authors

K Venkatadri

VR Prasad

TA Beg

HJ Leonard



Abstract

We present a mathematical and numerical study of the transient Marangoni thermo-convection flow of an
electrically conducting Newtonian fluid in an isotropic Darcy porous rectangular semiconductor melt
enclosure with buoyancy and internal heat generation effects, in an (x, y) coordinate system. The
governing equations comprising the mass conservation, x-direction momentum, y-direction momentum
and energy equation are formulated subject to a quartet of boundary conditions at the four walls of the
enclosure. The upper enclosure wall is assumed to be “free” with an appropriate surface tension dynamic
boundary condition. A series of transformations are implemented to render the mathematical model
dimensionless and into a vorticity form. The governing thermophysical parameters are shown to be the
Marangoni number for surface tension (thermocapillary) effects (Ma), Prandtl number (Pr), Grashof
number for buoyancy effects (Gr), enclosure aspect ratio (A), Hartmann hydromagnetic number (Ha),
Darcy number for bulk porous resistance (Da), and the internal heat generation parameter () the latter
being a function of the internal (RaI) and global Rayleigh numbers (Ra). An efficient finite difference
numerical method is employed to solve the boundary value problem. Validations with earlier purely fluid
solutions (Da →) are included. A mesh-independence test is included with further validation with other
published studies. Isotherms and isovels (streamlines) are computed as are Nusselt numbers at selected
boundaries. Solutions for the case of Pr = 0.054 (semiconductor melt) are also compared with earlier
studies showing excellent correlation. The model finds applications in the bulk crystal growth of
semiconductors, electromagnetic materials processing control and also hybrid fuel cells.

Citation

Beg, O., Venkatadri, K., Prasad, V., Beg, T., Kadir, A., & Leonard, H. (2020). Numerical simulation of hydromagnetic Marangoni convection flow in a Darcian porous semiconductor melt enclosure with buoyancy and heat generation effects. Materials Science and Engineering: B, 261, 114772. https://doi.org/10.1016/j.mseb.2020.114722

Journal Article Type Article
Acceptance Date Aug 14, 2020
Online Publication Date Sep 10, 2020
Publication Date Nov 1, 2020
Deposit Date Aug 21, 2020
Publicly Available Date Mar 10, 2022
Journal Materials Science and Engineering B
Print ISSN 0921-5107
Publisher Elsevier
Volume 261
Pages 114772
DOI https://doi.org/10.1016/j.mseb.2020.114722
Publisher URL https://doi.org/10.1016/j.mseb.2020.114722
Related Public URLs http://www.journals.elsevier.com/materials-science-and-engineering-b/

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