Optical and electronic properties of bismuth-implanted glasses

Hughes, MA; Federenko, Y; Lee, TH; Yao, J; Gholipour, B; Gwilliam, RM; Homewood, KP; Hewak, DW; Elliott, SR; Curry, RJ

Abstract

Photoluminescence (PL) and excitation spectra of Bi melt-doped oxide and chalcogenide glasses are very similar, indicating the same Bi center is present. When implanted with Bi, chalcogenide, phosphate and silica glasses, and BaF2 crystals, all display characteristically different PL spectra to when Bi is incorporated by melt-doping. This indicates that ion implantation is able to generate Bi centers which are not present in samples whose dopants are introduced during melting. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters.

Citation

Hughes, M., Federenko, Y., Lee, T., Yao, J., Gholipour, B., Gwilliam, R., …Curry, R. Optical and electronic properties of bismuth-implanted glasses. https://doi.org/10.1117/12.2036933

• Journal Article Type: Article
• Conference Name: SPIE Photonics West
• Deposit Date: Nov 10, 2015
• Journal: SPIE Proceedings: Optical Components and Materials XI
• Volume: 8982
• Pages: 898216
• DOI: https://doi.org/10.1117/12.2036933
• Publisher URL: http://dx.doi.org/10.1117/12.2036933
• Related Public URLs: http://spie.org/photonics-west.xml; http://spie.org/x1848.xml
• Additional Information: Event Type : Conference; Funders : Engineering and Physical Sciences Research Council (EPSRC)