Erbium implanted silicon for solid state quantum technologies

Rapid quench annealing of Er implanted Si for quantum networking applications (2024)
Journal Article

Erbium-implanted silicon (Er:Si) holds promise for quantum networking, but the formation of multiple Er centers poses a challenge. We show that the cubic center (Er-C) has C 2v or lower symmetry and propose all Er centers range between full Si-and fu... Read More about Rapid quench annealing of Er implanted Si for quantum networking applications.