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In situ transmission electron microscopy studies of radiation damage in copper indium diselenide (2006)
Journal Article
Donnelly, S., Hinks, J., Edmondson, P., Pilkington, R., Yakushev, M., & Birtcher, R. (2006). In situ transmission electron microscopy studies of radiation damage in copper indium diselenide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 242(1-2), 686-689. https://doi.org/10.1016/j.nimb.2005.08.089

The ternary semiconductor, CuInSe2 (CIS), is a promising semiconductor material for use in photovoltaic applications. Of particular interest is the high tolerance of this material to bombardment by energetic particles. This is of particular importanc... Read More about In situ transmission electron microscopy studies of radiation damage in copper indium diselenide.

Advanced coatings through pulsed magnetron sputtering (2004)
Journal Article
Kelly, P., Hisek, J., Zhou, Y., Pilkington, R., & Arnell, R. (2004). Advanced coatings through pulsed magnetron sputtering. Surface Engineering, 20(3), 157-162. https://doi.org/10.1179/026708404225010702

Pulsed magnetron sputtering (PMS) has become established as the process of choice for the deposition of dielectric materials for many applications. The process is attractive because it offers stable arc free operating conditions during the deposi... Read More about Advanced coatings through pulsed magnetron sputtering.

Advanced coatings through pulsed magnetron sputtering (2004)
Journal Article
Kelly, P., Hisek, J., Zhou, Y., Pilkington, R., & Arnell, R. (2004). Advanced coatings through pulsed magnetron sputtering. Surface Engineering, 20(3), 157-162. https://doi.org/10.1179/026708404225010702

Pulsed magnetron sputtering (PMS) has become established as the process of choice for the deposition of dielectric materials for many applications. The process is attractive because it offers stable arc free operating conditions during the deposi... Read More about Advanced coatings through pulsed magnetron sputtering.

Characterization of polycrystalline Cu(In,Ga)Te2 thin films prepared by pulsed laser deposition (2001)
Journal Article
Gremenok, V., Martin, R., Bodnar, I., Yakushev, M., Schmitz, W., Bente, K., …Tomlinson, R. (2001). Characterization of polycrystalline Cu(In,Ga)Te2 thin films prepared by pulsed laser deposition. Thin Solid Films, 394(1-2), 23-28. https://doi.org/10.1016/S0040-6090%2801%2901178-6

Thin films of the chalcopyrite compound CuGaXIn1-XTe2 (0=<X=<1) have been prepared by pulsed laser deposition (PLD) of prereacted material onto glass substrates. The structural and optical properties of these films have been investigated usin... Read More about Characterization of polycrystalline Cu(In,Ga)Te2 thin films prepared by pulsed laser deposition.

Characterization of polycrystalline Cu(In,Ga)Te2 thin films prepared by pulsed laser deposition (2001)
Journal Article
Gremenok, V., Martin, R., Bodnar, I., Yakushev, M., Schmitz, W., Bente, K., …Tomlinson, R. (2001). Characterization of polycrystalline Cu(In,Ga)Te2 thin films prepared by pulsed laser deposition. Thin Solid Films, 394(1-2), 23-28. https://doi.org/10.1016/S0040-6090%2801%2901178-6

Thin films of the chalcopyrite compound CuGaXIn1-XTe2 (0=<X=<1) have been prepared by pulsed laser deposition (PLD) of prereacted material onto glass substrates. The structural and optical properties of these films have been investigated usin... Read More about Characterization of polycrystalline Cu(In,Ga)Te2 thin films prepared by pulsed laser deposition.

Effects of D+ implantation of CIGS thin films through a CdS layer (2001)
Journal Article
Yakushev, M., Martin, R., Krustok, J., Mudriy, A., Holman, D., Schock, H., …Tomlinson, R. (2001). Effects of D+ implantation of CIGS thin films through a CdS layer. Thin Solid Films, 387(1-2), 201-204. https://doi.org/10.1016/S0040-6090%2800%2901730-2

Cu(InGa)Se2 thin films coated with a 30 nm CdS layer were implanted with doses of 1014–1016 cm−2 of 2.5 keV D+ at room temperature. Implanted and non-implanted areas of the films were characterised using low-temperature photoluminescence (PL). A broa... Read More about Effects of D+ implantation of CIGS thin films through a CdS layer.

Effects of D+ implantation of CIGS thin films through a CdS layer (2001)
Journal Article
Yakushev, M., Martin, R., Krustok, J., Mudriy, A., Holman, D., Schock, H., …Tomlinson, R. (2001). Effects of D+ implantation of CIGS thin films through a CdS layer. Thin Solid Films, 387(1-2), 201-204. https://doi.org/10.1016/S0040-6090%2800%2901730-2

Cu(InGa)Se2 thin films coated with a 30 nm CdS layer were implanted with doses of 1014–1016 cm−2 of 2.5 keV D+ at room temperature. Implanted and non-implanted areas of the films were characterised using low-temperature photoluminescence (PL). A broa... Read More about Effects of D+ implantation of CIGS thin films through a CdS layer.

Structural and optical investigations on CdS thin films grown by chemical bath technique (2001)
Journal Article
Ramaiah, K., Pilkington, R., Hill, A., Tomlinson, R., & Bhatnagar, A. (2001). Structural and optical investigations on CdS thin films grown by chemical bath technique. Materials Chemistry and Physics, 68(1-3), 22-30. https://doi.org/10.1016/S0254-0584%2800%2900281-9

Cadmium sulphide (CdS) thin films have been prepared by using a chemical bath deposition (CBD) method. Structural analysis (XRD and TEM) revealed that the films showed hexagonal structure with lattice constants a=0.4015 nm and c=0.6545 nm. On anneali... Read More about Structural and optical investigations on CdS thin films grown by chemical bath technique.

Structural and optical investigations on CdS thin films grown by chemical bath technique (2001)
Journal Article
Ramaiah, K., Pilkington, R., Hill, A., Tomlinson, R., & Bhatnagar, A. (2001). Structural and optical investigations on CdS thin films grown by chemical bath technique. Materials Chemistry and Physics, 68(1-3), 22-30. https://doi.org/10.1016/S0254-0584%2800%2900281-9

Cadmium sulphide (CdS) thin films have been prepared by using a chemical bath deposition (CBD) method. Structural analysis (XRD and TEM) revealed that the films showed hexagonal structure with lattice constants a=0.4015 nm and c=0.6545 nm. On anneali... Read More about Structural and optical investigations on CdS thin films grown by chemical bath technique.

Modeling and analysis of the growth of copper dendrites in saturated conditions using a multilevel factorial design analysis
Journal Article
Lawson, W., Pilkington, R., & Hill, A. Modeling and analysis of the growth of copper dendrites in saturated conditions using a multilevel factorial design analysis. Microelectronics International, 24(2), 28-34. https://doi.org/10.1108/13565360710745575

Purpose – Tracks, pads and vias on printed circuit boards can suffer from a variety of problems, if the surfaces are contaminated with electricallyconducting substances. Aims to model a multilevel full-factorial design to study the effects of tempera... Read More about Modeling and analysis of the growth of copper dendrites in saturated conditions using a multilevel factorial design analysis.